PART |
Description |
Maker |
15-29-1024 0015291024 7859-2554N |
2.54mm (.100") Pitch C-Grid庐 Shunt Terminal Housings, (15渭") Gold (Au), 2 Circuits,with Open End 2.54mm (.100) Pitch C-Grid? Shunt Terminal Housings, (15μ) Gold (Au), 2 Circuits,with Open End
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Molex Electronics Ltd.
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15-38-1026 A-7859-2A164 7859-2A164N 0015381026 |
2.54mm (.100") Pitch C-Grid庐 Shunt Terminal Housings, All Over Tin (Sn), 2 Circuits,with Open End 2.54mm (.100) Pitch C-Grid? Shunt Terminal Housings, All Over Tin (Sn), 2 Circuits,with Open End
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Molex Electronics Ltd.
|
15-38-1024 0015381024 |
2.54mm (.100") Pitch C-Grid庐 Shunt Terminal Housings, All Over Tin (Sn), 2 Circuits, with Open End 2.54mm (.100) Pitch C-Grid? Shunt Terminal Housings, All Over Tin (Sn), 2 Circuits, with Open End
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Molex Electronics Ltd.
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UT2316L-AE3-R UT2316-AE3-R |
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 5.86 to 6.53; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: MPAK N沟道增强模式 Zener Diode; Application: General; Pd (mW): 200; Vz (V): 5.86 to 6.12; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: MPAK Zener Diode; Application: General; Pd (mW): 200; Vz (V): 5.86 to 6.53; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: MPAK N-CHANNEL ENHANCEMENT MODE
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Unisonic Technologies Co., Ltd. 友顺科技股份有限公司
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DF2S12S DF3A6.2FE |
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 9.15 to 9.55; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: MPAK 产品使用,但对静电放电(ESD)保护 Zener Diode; Application: General; Pd (mW): 200; Vz (V): 9.45 to 10.55; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: URP Product for Use Only as Protection against Electrostatic Discharge (ESD).
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Toshiba, Corp. Toshiba Corporation Toshiba Semiconductor
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VN340SPTR-E VN340SP-E -VN340SP-E |
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 6.06 to 6.33; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: MPAK Zener Diode; Application: General; Pd (mW): 200; Vz (V): 6.26 to 6.53; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: MPAK 四高端智能电源固态继电器 Quad high side smart Power solid state relay
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EPCOS AG STMicroelectronics
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DF5A3.6CJE |
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 20.88 to 23.17; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: URP 二极管,不受ESD保护外延平面 Zener Diode; Application: General; Pd (mW): 200; Vz (V): 20.88 to 23.17; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: URP Diodes for Protecting against ESD Epitaxial Planar Type
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Toshiba, Corp. Toshiba Corporation Toshiba Semiconductor
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DF3A8.2FV |
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 2.50 to 2.75; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: URP 产品使用,但对静电放电(ESD保护 Zener Diode; Application: General; Pd (mW): 200; Vz (V): 2.50 to 2.75; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: URP Product for Use Only as Protection against Electrostatic Discharge (ESD)
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Toshiba, Corp. Toshiba Corporation Toshiba Semiconductor
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LCD-160G160A |
160 x 160 Dots Graphic LCD 160 × 160点阵图形液晶显示
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Vishay Intertechnology, Inc. VISAY[Vishay Siliconix]
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MJH6284 MJH6287 MJH6282 MJH6283 MJH6285 MJH6286 |
Supplementary protector; Current Rating:25A; No. of Poles:2; Mounting Type:DIN Rail RoHS Compliant: Yes DARLINGTON 20 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60 / 80 / 100 VOLTS 160 WATTS DARLINGTON 20 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60, 80, 100 VOLTS 160 WATTS
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Motorola, Inc. MOTOROLA[Motorola, Inc]
|
DF2S6.8S |
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 11.42 to 11.90; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: URP 产品使用,但对静电放电(ESD)保护 Zener Diode; Application: General; Pd (mW): 200; Vz (V): 11.42 to 11.90; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: URP Product for Use Only as Protection against Electrostatic Discharge (ESD).
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Toshiba, Corp. Toshiba Corporation Toshiba Semiconductor
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DF3A8.2FE DF5A3.3JE |
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 2.30 to 2.60; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: URP Zener Diode; Application: General; Pd (mW): 200; Vz (V): 2.10 to 2.40; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: URP Product for Use Only as Protection against Electrostatic Discharge (ESD)
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Toshiba Corporation Toshiba Semiconductor
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